???????????????????????????????? SSFM3008H1 ? main product characteristics: v dss 30v r ds (on) 7.4mohm(typ.) i d 20a SSFM3008H1 SSFM3008H1 sop-8 ? schematic diagram ? marking and pin assignment ? features and benefits: ? ? ? ? advanced trench mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 175 operating temperature description: it utilizes the latest frrmos (fast reverse recovery mos) trench proces sing techniques to achieve the high cell density and reduces the on-resistance, fast switchi ng and soft reverse recovery time. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications ? absolute max rating: symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 20 i d @ tc = 100c continuous drain current, v gs @ 10v 16 i dm pulsed drain current 136 a p d @tc = 25c power dissipation 3.1 w v ds drain-source voltage 30 v v gs gate-to-source voltage 20 v e as single pulse avalanche energy @ l=0.1mh 100 mj i as avalanche current @ l=0.1mh 44 a t j t stg operating junction and storage te mperature range -55 to + 175 c thermal resistance symbol characterizes typ. max. units r jc junction-to-case ? 22 /w junction-to-ambient (t 10s) ? 35 /w r ja junction-to-ambient (pcb mounted, steady-state) ? 65 /w ? silikron semiconductor co., ltd. 2011.11.05 version: 1.0 page 1 of 8 www.silikron.com ?
???????????????????????????????? SSFM3008H1 ? electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 36.5 ? v v gs = 0v, id = 250 a ? 7.4 8 m ? v gs =10v,i d =20a r ds(on) static drain-to-source on-resistance ? 11.5 14 m ? v gs =4.5v,i d =10a v gs(th) gate threshold voltage 1 ? 3 v v ds = v gs , i d = 250 a i dss drain-to-source leakage current ? ? 10 a v ds = 30v,v gs = 0v ? ? ? ? 100 v gs =20v i gss gate-to-source forward leakage -100 ? ? ? ? na v gs = -20v g fs forward transconductance 4 7.6 ? s v ds = 15v,i d =16a q g total gate charge ? ? 17.6 ? q gs gate-to-source charge ? ? 6.5 ? q gd gate-to-drain("miller") charge ? ? 8.6 ? nc v ds =15v, i d =16a, v gs =4.5v t d(on) turn-on delay time ? ? 32.8 ? t r rise time ? ? 104.3 ? t d(off) turn-off delay time ? ? 12.9 ? t f fall time ? ? 8.5 ? ns v gs =4.5v, vds=15v, r gen =3 ?, i d =16a c iss input capacitance ? ? 1844 ? c oss output capacitance ? ? 342 ? c rss reverse transfer capacitance ? ? 215 ? pf v gs = 0v v ds = 15v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current ? ? 20 a i sm pulsed source current ? ? 136 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage ? 0.7 1.0 v i s =1.0a, v gs =0v t rr reverse recovery time ? 16.5 ? ns q rr reverse recovery charge ? 8.2 ? nc t j = 25c, i f =3a, di/dt = 100a/ s ? ? silikron semiconductor co., ltd. 2011.11.05 version:1.0 page 2 of 8 www.silikron.com ?
???????????????????????????????? SSFM3008H1 ? test circuits and waveforms ? silikron semiconductor co., ltd. 2011.11.05 version:1.0 page 3 of 8 www.silikron.com ? switch waveforms: notes : ? the maximum current rating is limited by bond-wires. repetitive rating; pulse width limit ed by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to- ambient thermal resistance. the value of r ja is measured with the devic e mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedenc e which is measured with the device mounted to a large heatsink, assumi ng a maximum junction temperature of t j(max) =175c.
???????????????????????????????? SSFM3008H1 ? 0 10 20 30 40 50 60 70 80 90 100 00.511.522.533.544.55 vgs,gate to source voltage(v) id,drain current(a) 125 25 vds=5v typical electrical characteristics 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 vsd,source to drain voltage(v) is,source to drain current(a) 125 25 figure 1: body-diode characteristics ? figure 2: typical transfer characteristics ? ? silikron semiconductor co., ltd. 2011.11.05 version:1.0 page 4 of 8 www.silikron.com ? figure 3: gate-charge characteristics ? figure 4: capacitance characteristics ? 0 1 2 vgs,gate 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 qg,gate charge(nc) to source voltage(v) vds=15v id=20a 0 1 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 qg,gate charge(nc) to source voltage(v) 2 vgs,gate vds=15v id=20a 0 1 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 qg,gate charge(nc) to source voltage(v) 2 vgs,gate 0 1 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 qg,gate charge(nc) to source voltage(v) 2 vgs,gate vds=15v id=20a 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 vds, drain to source voltage(v) capacitance (pf) ciss coss vgs=0,f=1mhz ciss=cgd+cgs, cds shorted coss=cds+cgd crss=cgd crss 0.1 1 10 100 1000 0.01 0.1 1 10 100 vds,drain to source voltage(v) id,drain current(a) 10us 100us 1ms 10ms dc ron limited tj(max)=175 tc=25 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) power ( w) tj(max)=175 ta=25 figure 5: maximum forward biased safe operating area ? figure 6: single pulse power rating junction-to-case
???????????????????????????????? SSFM3008H1 ? typical thermal characteristics 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) zjc,transient thermal resistance( normalized ) duty cycle d= 0.5,0.3,0.1,0.05,0.01,single tj max pdm*z jc*r jc+tc r jc=2.5 /w t t p d=t p /t figure 7: normalized thermal transient impedance curve ? silikron semiconductor co., ltd. 2011.11.05 version:1.0 page 5 of 8 www.silikron.com ?
???????????????????????????????? SSFM3008H1 ? mechanical data sop-8 package information notes 1. dimensions are inclusive of plating 2. package body sizes exclude mold flash and gate burrs . mold flash at the non-lead sides should be less than 6 mils. 3. dimension l is m easured in gauge plane. 4. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ? silikron semiconductor co., ltd. 2011.11.05 version:1.0 page 6 of 8 www.silikron.com ?
???????????????????????????????? SSFM3008H1 ? ? silikron semiconductor co., ltd. 2011.11.05 version:1.0 page 7 of 8 www.silikron.com ? ordering and marking information device marking: SSFM3008H1 package (available) sop-8 operating temperature range c : -55 to 175 oc devices per unit package type units/ tube tubes/ inner box units/inner box inner boxes/ carton box units/ carton box sop-8 2500 2 5000 8 40000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 175 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =125 to 175 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
???????????????????????????????? SSFM3008H1 ? ? silikron semiconductor co., ltd. 2011.11.05 version:1.0 page 8 of 8 www.silikron.com ? attention: any and all silikron products described or contained here in do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reason ably expected to result in serious physical and/or material damage. consult with your silikron representative nearest you bef ore using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures t hat result from using product s at values that exceed, even momentarily, rated values (such as maximum rating s, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contai ned herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functi ons of the described products as mounted in the customer?s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mount ed in the customer?s products or equipment. silikron semiconductor co.,ltd. strives to supply high- quality high-reliability prod ucts. however, any and all semiconductor products fail with some probability. it is possibl e that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt sa fety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant desig n, and structural design. in the event that any or all silik ron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorit ies concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information st orage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellect ual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing e quipment, refer to the "deliv ery specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service : sales@silikron.com technical support: technical@silikron.com suzhou silikron semiconductor corp. building ? 11a ? suchun ? industrial ? square, ? 428# ? xinglong ? street, ? suzhou ? p. r . ? china ? tel: (86-512) 62560688 fax: (86-512) 65160705 e-mail: sales@silikron.com
|
